Defects creation under UV irradiation of PbWO4 crystals
Language English Country Great Britain, England Media print-electronic
Document type Journal Article, Research Support, Non-U.S. Gov't
PubMed
16581927
DOI
10.1093/rpd/nci580
PII: nci580
Knihovny.cz E-resources
- MeSH
- Radiation Dosage MeSH
- Crystallization methods MeSH
- Tungsten Compounds analysis chemistry radiation effects MeSH
- Thermoluminescent Dosimetry methods MeSH
- Materials Testing MeSH
- Ultraviolet Rays * MeSH
- Dose-Response Relationship, Radiation MeSH
- Publication type
- Journal Article MeSH
- Research Support, Non-U.S. Gov't MeSH
- Names of Substances
- lead tungstate MeSH Browser
- Tungsten Compounds MeSH
A systematic study of photothermally stimulated defects creation processes is carried out by the thermally stimulated luminescence (TSL) method for a large number of undoped and doped PbWO4 crystals under irradiation at 80-180 K in the 3.4-4.3 eV energy range. The activation energy Ea for the regular exciton state disintegration is found to be approximately 0.1 eV. For defect-related states disintegration, Ea varies in the crystals studied from 0.03 to 0.36 eV. The origin of the defect-related states is discussed. The conclusion is made that not only a release of charge carriers but also charge transfer processes take place under UV irradiation of PbWO4 crystals.
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