Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor
Language English Country Netherlands Media print-electronic
Document type Journal Article, Research Support, Non-U.S. Gov't
PubMed
25835144
DOI
10.1016/j.colsurfb.2015.03.035
PII: S0927-7765(15)00169-1
Knihovny.cz E-resources
- Keywords
- Field-effect transistors, Leakage currents, Nanocrystalline diamond, Osteoblastic cells,
- MeSH
- Action Potentials * MeSH
- Biosensing Techniques instrumentation MeSH
- Cell Adhesion * MeSH
- Diamond chemistry MeSH
- Transistors, Electronic * MeSH
- Ions MeSH
- Humans MeSH
- Tumor Cells, Cultured MeSH
- Bone Neoplasms * MeSH
- Osteosarcoma * MeSH
- Check Tag
- Humans MeSH
- Publication type
- Journal Article MeSH
- Research Support, Non-U.S. Gov't MeSH
- Names of Substances
- Diamond MeSH
- Ions MeSH
We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring.
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