Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm2 V-1 s-1 and a greatly reduced sheet resistance of only 130 ohms square-1. The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier scattering and (ii) elimination of all defective pyridinic nitrogen centers by oxygen etching. Our study opens up an avenue for the growth of high-mobility/conductivity doped graphene with tunable work functions for scalable graphene-based electronic and device applications.

Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 P R China

Australian Institute for Bioengineering and Nanotechnology The University of Queensland Brisbane QLD 4072 Australia

Beijing Graphene Institute Beijing 100095 P R China

Beijing Key Laboratory of Quantum Devices Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 P R China

Center for Multidimensional Carbon Materials Ulsan 689 798 Republic of Korea

Center for Nanochemistry Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 P R China

Center of Polymer and Carbon Materials Polish Academy of Sciences M Curie Sklodowskiej 34 Zabrze 41 819 Poland

China Fortune Land Development Industrial Investment Co Ltd Beijing P R China; School of Economics and Management Tsinghua University Beijing P R China

Department of Materials Science and Engineering College of Engineering Peking University Beijing 100871 P R China

Institute of Environmental Technology VŠB Technical University of Ostrava 17 Listopadu 15 Ostrava 708 33 Czech Republic

School of Materials Science and Engineering Ulsan National Institute of Science and Technology Ulsan 689 798 Republic of Korea

Soochow Institute for Energy and Materials Innovations College of Physics Optoelectronics and Energy Collaborative Innovation Center of Suzhou Nano Science and Technology Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow University Suzhou 215006 P R China

State Key Laboratory of Precision Spectroscopy School of Physics and Material Science East China Normal University Shanghai 200062 P R China

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