This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe2 layers grown by chemical vapour deposition (CVD), using MoO3 and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoSe2 layers on the processing parameters. The morphology of the samples was investigated by field emission scanning electron microscopy (FESEM) and the thickness of the deposited layers was determined by atomic force microscopy (AFM). Raman and photoluminescence (PL) spectroscopies were used to confirm the high quality of the MoSe2 layers. Surface composition was examined by photoelectron spectroscopy (XPS). Moreover, the MoSe2/SiOx/Si heterojunctions exhibit diode behaviour, with a rectification ratio of 10, measured at ±2.0 V, which is due to the p-i-n heterojunctions formed at the p-Si/SiOx/MoSe2 interface. A photovoltaic effect was observed with a short circuit current density (Jsc), open circuit voltage (VOC) and efficiency of -0.80 mA/cm2, 1.55 V and 0.5%, respectively. These results provide a guide for the preparation of p-i-n heterojunctions based on few-layer MoSe2 with improved photovoltaic response.

CeFEMA Center of Physics and Engineering of Advanced Materials Universidade de Lisboa 1749 016 Lisboa Portugal

Centro de Física das Universidades do Minho e do Porto Campus de Gualtar 4710 057 Braga Portugal

Centro de Química e Bioquímica e Centro de Química Estrutural Departamento de Química e Bioquímica Faculdade de Ciências Universidade de Lisboa 1749 016 Lisboa Portugal

Centro de Química Estrutural Departamento de Engenharia Química Instituto Superior Técnico Universidade de Lisboa 1096 001 Lisboa Portugal

Departamento de Física Faculdade de Ciências Universidade de Lisboa 1749 016 Lisboa Portugal

Department of Quantum Technologies Wroclaw University of Science and Technology Wroclaw 50 370 Poland

Department of Surface and Plasma Science Faculty of Mathematics and Physics Charles University 5 Holešovičkách 2 Staré Město 18000 Prague 8 Czech Republic

GeePs UMR CNRS 8507 11 rue Joliot Curie Plateau de Moulon 91192 Gif sur Yvette France

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