The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-δ/p-Si/Al hetero-junction. The orthoferrite YbFeO3-δthin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH)and ideality factornof the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes ofI-Vcurves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-δlayer at the Al/p-Si interface.

CEITEC BUT Brno University of Technology Purkyňova 123 612 00 Brno Czech Republic

Faculty of Engineering and Natural Sciences Department of Engineering Physics Istanbul Medeniyet University 34700 Uskudar Istanbul Turkey

Faculty of Engineering Department of Electrical and Electronics Engineering Atatürk University TR 25240 Erzurum Turkey

Faculty of Science Department of Physics Eskisehir Technical University Yunusemre Campus 26470 Eskisehir Turkey

Institute of Physical Engineering Brno University of Technology Technická 2 616 69 Brno Czech Republic

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