This paper deals with developing and implementing a bidirectional galvanically isolated on-board charger of a high-power density. The power density of the new charger was 4 kW/kg and 2.46 kW/dm3, and the maximum efficiency was 96.4% at 3.4 kW. Due to the requirement to achieve a high-power density, a single-stage inverter topology was used. Regarding switching losses, due to the topology of the circuit with so-called hard switching, the switching frequency was set to 150 kHz. A laboratory prototype was built to verify the properties and operating principles of the described charger topology. The on-board charger has been tested in a microgrid test platform. Due to the parasitic properties of the transformer and other electronic components, overvoltage with subsequent oscillations occurred on the primary side of the transformer and damped resonance on its secondary side. These parasitic properties caused interference and especially voltage stress on the semiconductor elements. These undesirable phenomena have been eliminated by adding an active element to the charger topology and a new transistor control strategy. This new switching control strategy of transistors has been patented.

ENET Centre VSB Technical University of Ostrava 17 Listopadu 2172 15 708 00 Ostrava Czech Republic

Faculty of Electric Engineering and Computer Science VSB Technical University of Ostrava 17 Listopadu 2172 15 708 00 Ostrava Czech Republic

Faculty of Electrical and Control Engineering Gdansk University of Technology Narutowicza st 11 12 80 233 Gdansk Poland

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