Ultrafast Long-Distance Electron-Hole Plasma Expansion in GaAs Mediated by Stimulated Emission and Reabsorption of Photons
Status PubMed-not-MEDLINE Language English Country United States Media print
Document type Journal Article
- MeSH
- Arsenicals * MeSH
- Electrons MeSH
- Photons MeSH
- Gallium * MeSH
- Publication type
- Journal Article MeSH
- Names of Substances
- Arsenicals * MeSH
- Gallium * MeSH
- gallium arsenide MeSH Browser
Electron-hole plasma expansion with velocities exceeding c/50 and lasting over 10 ps at 300 K was evidenced by time-resolved terahertz spectroscopy. This regime, in which the carriers are driven over >30 μm is governed by stimulated emission due to low-energy electron-hole pair recombination and reabsorption of the emitted photons outside the plasma volume. At low temperatures a speed of c/10 was observed in the regime where the excitation pulse spectrally overlaps with emitted photons, leading to strong coherent light-matter interaction and optical soliton propagation effects.
Charles University Faculty of Mathematics and Physics Ke Karlovu 3 121 16 Prague 2 Czech Republic
Institute of Physics ASCR Na Slovance 2 182 00 Prague 8 Czech Republic
References provided by Crossref.org
Photon-assisted ultrafast electron-hole plasma expansion in direct band semiconductors
