Pt@WS2 -an Extrinsic 2D Dilute Ferromagnetic Semiconductor Beyond Room Temperature

. 2025 Mar ; 9 (3) : e2400955. [epub] 20240920

Status PubMed-not-MEDLINE Jazyk angličtina Země Německo Médium print-electronic

Typ dokumentu časopisecké články

Perzistentní odkaz   https://www.medvik.cz/link/pmid39300866

Grantová podpora
AS-GCS-112-M04 (YH) Academia Sinica
113-2124-M-001-010-(YH) Ministry of Science and Technology, Taiwan
113-2124-M-002-011-MY3 Ministry of Science and Technology, Taiwan
National Taiwan University Excellence Research Program Core Consortiums

Extrinsic dilute magnetic semiconductors achieve magnetic functionality through tailored interaction between a semiconducting matrix and a non-magnetic dopant. The absence of intrinsic magnetic impurities makes this approach promising to investigate the newly emerging field of 2D dilute magnetic semiconductors. Here the first realization of an extrinsic 2D DMS in Pt-doped WS2 is demonstrated. A bottom-up synthesis approach yields a uniform and highly crystalline monolayer where platinum selectively occupies the tungsten sub-lattice. The orbital overlap between W 4d and Pt 5d results in spin-selective hybrid states that produce a strong valley-Zeeman splitting. Combined experimental and theoretical results show that this interaction yields a sizable ferromagnetic response with a Curie temperature ≈375 K. These results open up a new route toward 2D magnetic properties through tailoring of atomic interactions for future applications in spintronics and magnetic nanoactuation.

Zobrazit více v PubMed

P. Liu, Y. Zhang, K. Li, Y. Li, Y. Pu, iScience 2023, 26, 107584.

S. J. Yun, D. L. Duong, D. M. Ha, K. Singh, T. L. Phan, W. Choi, Y. M. Kim, Y. H. Lee, Adv. Sci. 2020, 7, 1903076.

Y. T. H. Pham, M. Liu, V. O. Jimenez, Z. Yu, V. Kalappattil, F. Zhang, K. Wang, T. Williams, M. Terrones, M. H. Phan, Adv. Mater. 2020, 32, 2003607.

S. J. Yun, B. W. Cho, T. Dinesh, D. H. Yang, Y. I. Kim, J. W. Jin, S. H. Yang, T. D. Nguyen, Y. M. Kim, K. K. Kim, D. L. Duong, S. G. Kim, Y. H. Lee, Adv. Mater. 2022, 34, 2106551.

F. Zhang, B. Zheng, A. Sebastian, D. H. Olson, M. Liu, K. Fujisawa, Y. T. H. Pham, V. O. Jimenez, V. Kalappattil, L. Miao, T. Zhang, R. Pendurthi, Y. Lei, A. L. Elías, Y. Wang, N. Alem, P. E. Hopkins, S. Das, V. H. Crespi, M. H. Phan, M. Terrones, Adv. Sci. 2020, 7, 2001174.

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, D. Ferrand, Science 2000, 287, 1019.

X. Zhao, C. Xia, X. Dai, T. Wang, P. Chen, L. Tian, J. Magn. Magn. Mater. 2016, 414, 45.

P. Chen, X. Zhao, T. Wang, X. Dai, C. Xia, J. Alloys Compd. 2016, 680, 659.

A. Majid, A. Imtiaz, M. Yoshiya, J. Appl. Phys. 2016, 120, 142124.

X. Zhao, C. Xia, T. Wang, X. Dai, J. Alloys Compd. 2016, 654, 574.

H. T. Lin, W. J. Huang, S. H. Wang, H. H. Lin, T. S. Chin, J. Phys.: Condens. Matter 2008, 20, 095004.

A. Rai, A. Valsaraj, H. C. P. Movva, A. Roy, R. Ghosh, S. Sonde, S. Kang, J. Chang, T. Trivedi, R. Dey, S. Guchhait, S. Larentis, L. F. Register, E. Tutuc, S. K. Banerjee, Nano Lett. 2015, 15, 4329.

D. Kiriya, M. Tosun, P. Zhao, J. S. Kang, A. Javey, J. Am. Chem. Soc. 2014, 136, 7853.

S. H. Chen, Y. Nguyen, T. W. Chen, Z. L. Yen, M. Hofmann, Y. P. Hsieh, Carbon 2020, 165, 163.

Y. D. Park, A. T. Hanbicki, S. C. Erwin, C. S. Hellberg, J. M. Sullivan, J. E. Mattson, T. F. Ambrose, A. Wilson, G. Spanos, B. T. Jonker, Science 2002, 295, 651.

A. Dimoulas, Adv. Mater. Interfaces 2022, 9, 2201469.

Z. Cai, B. Liu, X. Zou, H. M. Cheng, Chem. Rev. 2018, 118, 6091.

Y. S. Chen, S. K. Chiu, D. L. Tsai, C. Y. Liu, H. A. Ting, Y. C. Yao, H. Son, G. Haider, M. Kalbáč, C. C. Ting, Y. F. Chen, M. Hofmann, Y. P. Hsieh, Npj 2D Mater.Appl. 2022, 6, 54.

Y. C. Lee, S. W. Chang, S. H. Chen, S. L. Chen, H. L. Chen, Adv. Sci. 2022, 9, 2102128.

D. Zhao, S. Xie, Y. Wang, H. Zhu, L. Chen, Q. Sun, D. W. Zhang, AIP Adv. 2019, 9, 025225.

A. do Nascimento Barbosa, C. A. D. Mendoza, N. J. S. Figueroa, M. Terrones, F. L. F. Júnior, Appl. Surf. Sci. 2021, 535, 147685.

A. M. Dadgar, D. Scullion, K. Kang, D. Esposito, E. H. Yang, I. P. Herman, M. A. Pimenta, E. J. G. Santos, A. N. Pasupathy, Chem. Mater. 2018, 30, 5148.

R. G. Mendes, J. Pang, A. Bachmatiuk, H. Q. Ta, L. Zhao, T. Gemming, L. Fu, Z. Liu, M. H. Rümmeli, ACS Nano 2019, 13, 978.

S. J. Pennycook, B. Rafferty, P. D. Nellist, Microsc. Microanal. 2000, 6, 343.

X. Q. Dai, Y. N. Tang, J. H. Zhao, Y. W. Dai, J. Phys. Condens. Matter. 2010, 22, 316005.

L. Yang, H. Wu, W. Zhang, X. Lou, Z. Xie, X. Yu, Y. Liu, H. Chang, Adv. Electron. Mater. 2019, 5, 1900552.

M. Koperski, M. R. Molas, A. Arora, K. Nogajewski, M. Bartos, J. Wyzula, D. Vaclavkova, P. Kossacki, M. Potemski, 2D Mater. 2019, 6, 015001.

Z. Zhang, X. Zou, V. H. Crespi, B. I. Yakobson, ACS Nano 2013, 7, 10475.

A. Arora, R. Schmidt, R. Schneider, M. R. Molas, I. Breslavetz, M. Potemski, R. Bratschitsch, Nano Lett. 2016, 16, 3624.

J. Zhang, L. Du, S. Feng, R. W. Zhang, B. Cao, C. Zou, Y. Chen, M. Liao, B. Zhang, S. A. Yang, G. Zhang, T. Yu, Nat. Commun. 2019, 10, 4226.

J. M. D. Coey, Solid State Sci. 2005, 7, 660.

L. Liang, Q. Chen, J. Lu, W. Talsma, J. Shan, G. R. Blake, T. T. M. Palstra, J. Ye, Sci. Adv. 2018, 4, eaar2030.

Y. Sakamoto, Y. Oba, H. Maki, M. Suda, Y. Einaga, T. Sato, M. Mizumaki, N. Kawamura, M. Suzuki, Phys. Rev. B 2011, 83, 104420.

H. Zhou, C. C. Mayorga‐Martinez, S. Pané, L. Zhang, M. Pumera, Chem. Rev. 2021, 121, 4999.

P. Hohenberg, W. Kohn, Phys. Rev. 1964, 136, B864.

G. Kresse, J. Furthmüller, Comput. Mater. Sci. 1996, 6, 15.

P. Hohenberg, W. Kohn, Physical Review. 1964, 136, 864.

G. Kresse, J. Furthmüller, Computational Materials Science. 1996, 6, 15.

P. E. Blöchl, Physical Review B. 1994, 50, 17953.

J. P. Perdew, K. Burke, M. Ernzerhof, Physical Review Letters. 1996, 77, 3865.

Najít záznam

Citační ukazatele

Nahrávání dat ...

Možnosti archivace

Nahrávání dat ...