Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D Fe3GaTe2 (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K. Interestingly, this structure induces a positive EB under low cooling field, in contrast to conventional phenomena. Moreover, by employing asymmetric field sweeping methods, we effectively manipulate the zero-field cooling EB of the device with a switchable sign and a tunable magnitude. Thus, these findings not only elucidate a distinct mechanism analysis for EB phenomena with perpendicular coupled spin configurations but also hold promise for promoting contemporary 2D spintronic device applications.

Center of Free Electron Laser and High Magnetic Field Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information Technology Anhui University Hefei 230601 China

Department of Inorganic Chemistry Faculty of Chemical Technology University of Chemistry and Technology Prague Technicka 5 Prague 6 Prague 166 28 Czech Republic

Department of Physics University of Science and Technology of China Hefei 230026 China

Jiangsu Laboratory of Advanced Functional Materials School of Electronic and Information Engineering Changshu Institute of Technology Changshu 215500 China

Leibniz International Joint Research Center of Materials Sciences of Anhui Province Hefei 230601 China

School of Physics and Optoelectronics Engineering Anhui University Hefei 230601 China

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