topological quantum phase transition Dotaz Zobrazit nápovědu
Quantum phase transitions (QPTs) driven by quantum fluctuations are transitions between distinct quantum phases of matter. At present, they are poorly understood and not readily controlled. Here, scanning tunneling microscopy (STM) and noncontact atomic force microscopy (nc-AFM) are used to explore atomic scale control over quantum phase transitions between two different topological quantum states of a well-defined π-conjugated polymer. The phase transition is driven by a pseudo Jahn-Teller effect that is activated above a certain polymer chain length. In addition, theoretical calculations indicate the presence of long-lasting coherent fluctuations between the polymer's two quantum phases near the phase transition, at finite temperature. This work thus presents a new way of exploring atomic-scale control over QPTs and indicates that emerging quantum criticality in the vicinity of a QPT can give rise to new states of organic matter.
Topological insulators constitute a new phase of matter protected by symmetries. Time-reversal symmetry protects strong topological insulators of the Z2 class, which possess an odd number of metallic surface states with dispersion of a Dirac cone. Topological crystalline insulators are merely protected by individual crystal symmetries and exist for an even number of Dirac cones. Here, we demonstrate that Bi-doping of Pb1-x Sn x Se (111) epilayers induces a quantum phase transition from a topological crystalline insulator to a Z2 topological insulator. This occurs because Bi-doping lifts the fourfold valley degeneracy and induces a gap at [Formula: see text], while the three Dirac cones at the [Formula: see text] points of the surface Brillouin zone remain intact. We interpret this new phase transition as caused by a lattice distortion. Our findings extend the topological phase diagram enormously and make strong topological insulators switchable by distortions or electric fields.Transitions between topological phases of matter protected by different symmetries remain rare. Here, Mandal et al. report a quantum phase transition from a topological crystalline insulator to a Z2 topological insulator by doping Bi into Pb1-x Sn x Se (111) thin films.
- Publikační typ
- časopisecké články MeSH
- práce podpořená grantem MeSH
Franckeite is a natural superlattice composed of two alternating layers of different composition which has shown potential for optoelectronic applications. In part, the interest in franckeite lies in its layered nature which makes it easy to exfoliate into very thin heterostructures. Not surprisingly, its chemical composition and lattice structure are so complex that franckeite has escaped screening protocols and high-throughput searches of materials with nontrivial topological properties. On the basis of density functional theory calculations, we predict a quantum phase transition originating from stoichiometric changes in one of franckeite composing layers (the quasihexagonal one). While for a large concentration of Sb, franckeite is a sequence of type-II semiconductor heterojunctions, for a large concentration of Sn, these turn into type-III, much alike InAs/GaSb artificial heterojunctions, and franckeite becomes a strong topological insulator. Transmission electron microscopy observations confirm that such a phase transition may actually occur in nature.
- Klíčová slova
- 2D material, first-principles calculations, franckeite, natural superlattice, topological insulator, transmission electron microscopy,
- MeSH
- polovodiče * MeSH
- transmisní elektronová mikroskopie MeSH
- změna skupenství MeSH
- Publikační typ
- časopisecké články MeSH
- práce podpořená grantem MeSH
The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor1-4. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator5-9, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits4, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far6-8. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases3,10-16. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal3,17 Na3Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na3Bi is suitable for room-temperature topological transistor operation.
Realization of topological quantum states in carbon nanostructures has recently emerged as a promising platform for hosting highly coherent and controllable quantum dot spin qubits. However, their adjustable manipulation remains elusive. Here, we report the atomically accurate control of the hybridization level of topologically protected quantum edge states emerging from topological interfaces in bottom-up-fabricated π-conjugated polymers. Our investigation employed a combination of low-temperature scanning tunneling microscopy and spectroscopy, along with high-resolution atomic force microscopy, to effectively modify the hybridization level of neighboring edge states by the selective dehydrogenation reaction of molecular units in a pentacene-based polymer and demonstrate their reversible character. Density functional theory, tight binding, and complete active space calculations for the Hubbard model were employed to support our findings, revealing that the extent of orbital overlap between the topological edge states can be finely tuned based on the geometry and electronic bandgap of the interconnecting region. These results demonstrate the utility of topological edge states as components for designing complex quantum arrangements for advanced electronic devices.
Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronic devices. A recent theory of Lu and Shen [Phys. Rev. Lett. 112, 146601 (2014)PRLTAO0031-900710.1103/PhysRevLett.112.146601] on magnetically doped topological insulators predicts that quantum corrections Δκ to the temperature dependence of conductivity can change sign across the Curie transition. This phenomenon has been attributed to a suppression of the Berry phase of the topological surface states at the Fermi level, caused by a magnetic energy gap. Here, we demonstrate experimentally that Δκ can reverse its sign even when the Berry phase at the Fermi level remains unchanged. The contradictory behavior to theory predictions is resolved by extending the model by Lu and Shen to a nonmonotonic temperature scaling of the inelastic scattering length showing a turning point at the Curie transition.
- Publikační typ
- časopisecké články MeSH
Topological band theory predicts that a topological electronic phase transition between two insulators must proceed via closure of the electronic gap. Here, we use this transition to circumvent the instability of metallic phases in π-conjugated one-dimensional (1D) polymers. By means of density functional theory, tight-binding and GW calculations, we predict polymers near the topological transition from a trivial to a non-trivial quantum phase. We then use on-surface synthesis with custom-designed precursors to make polymers consisting of 1D linearly bridged acene moieties, which feature narrow bandgaps and in-gap zero-energy edge states when in the topologically non-trivial phase close to the topological transition point. We also reveal the fundamental connection between topological classes and resonant forms of 1D π-conjugated polymers.
- Publikační typ
- časopisecké články MeSH
Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Here, we report the observation of resonant magnetic circular dichroism (MCD) in the infrared range in thin film MnBi_{2}Te_{4} exhibiting a spectral intensity that correlates with the anomalous Hall effect. Both phenomena emerge with a field-driven phase transition from an antiferromagnet to a canted ferromagnet. By theoretically relating the MCD to the anomalous Hall effect via Berry curvature for a metallic state, we show that this transition accompanies an abrupt onset of Berry curvature, signaling a topological phase transition from a topological insulator to a doped Chern insulator. Our density functional theory calculation suggests the MCD signal mainly originates from an optical transition at the Brillouin zone edge, hinting at a potential new source of Berry curvature away from the commonly considered Γ point. Our findings demonstrate a novel experimental approach for detecting Berry curvature through spectroscopy of the interband MCD, generally applicable to magnetic materials.
- Publikační typ
- časopisecké články MeSH
We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to φ0 = 0.5π, which are consistent with a Zeeman field coupling to highly transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit, and orbital effects in InAs/Al JJs, giving improved understanding of phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics.
- Klíčová slova
- 2DEG, hybrid materials, orbital effect, phase transitions, spin−orbit interaction, superconductor−semiconductor, φ0-junction,
- Publikační typ
- časopisecké články MeSH
