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Defects creation under UV irradiation of PbWO4 crystals
Bohacek P, Fabeni P, Krasnikov A, Nikl M, Pazzi GP, Susini C, Zazubovich S.
Jazyk angličtina Země Velká Británie
PubMed
16581927
DOI
10.1093/rpd/nci580
Knihovny.cz E-zdroje
- MeSH
- dávka záření MeSH
- financování organizované MeSH
- krystalizace metody MeSH
- sloučeniny wolframu analýza chemie účinky záření MeSH
- termoluminiscenční dozimetrie metody MeSH
- testování materiálů MeSH
- ultrafialové záření MeSH
- vztah dávky záření a odpovědi MeSH
A systematic study of photothermally stimulated defects creation processes is carried out by the thermally stimulated luminescence (TSL) method for a large number of undoped and doped PbWO4 crystals under irradiation at 80-180 K in the 3.4-4.3 eV energy range. The activation energy Ea for the regular exciton state disintegration is found to be approximately 0.1 eV. For defect-related states disintegration, Ea varies in the crystals studied from 0.03 to 0.36 eV. The origin of the defect-related states is discussed. The conclusion is made that not only a release of charge carriers but also charge transfer processes take place under UV irradiation of PbWO4 crystals.
Citace poskytuje Crossref.org
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