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Reconfigurable Boolean logic using magnetic single-electron transistors
MF. Gonzalez-Zalba, C. Ciccarelli, LP. Zarbo, AC. Irvine, RC. Campion, BL. Gallagher, T. Jungwirth, AJ. Ferguson, J. Wunderlich,
Jazyk angličtina Země Spojené státy americké
Typ dokumentu časopisecké články, práce podpořená grantem
NLK
Directory of Open Access Journals
od 2006
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Public Library of Science (PLoS)
od 2006
PubMed Central
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ProQuest Central
od 2006-12-01
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od 2006-01-01
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od 2006-01-01
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od 2006-10-01
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od 2008-01-01
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od 2006-12-01
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od 2006-12-01
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od 2006
- MeSH
- elektronické tranzistory * MeSH
- magnetické pole * MeSH
- teoretické modely * MeSH
- Publikační typ
- časopisecké články MeSH
- práce podpořená grantem MeSH
We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.
Cavendsih Laboratory University of Cambridge Cambridge United Kingdom
Hitachi Cambridge Laboratory Cambridge CB3 0HE United Kingdom
School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD United Kingdom
Citace poskytuje Crossref.org
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- $a We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.
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