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A photodetector based on the non-centrosymmetric 2D pseudo-binary chalcogenide MnIn2Se4
M. Serra, N. Antonatos, L. Lajaunie, J. Albero, H. Garcia, M. Weng, L. Bastonero, KJ. Sarkar, R. Gusmão, J. Luxa, R. Bartoszewicz, J. Ziembicki, I. Plutnarová, N. Marzari, R. Kudrawiec, Z. Sofer
Status neindexováno Jazyk angličtina Země Anglie, Velká Británie
Typ dokumentu časopisecké články
PubMed
39896131
DOI
10.1039/d4tc04380d
Knihovny.cz E-zdroje
- Publikační typ
- časopisecké články MeSH
Due to their attractive band gap properties and van der Waals structure, 2D binary chalcogenide materials have been widely investigated in the last decade, finding applications in several fields such as catalysis, spintronics, and optoelectronics. Ternary 2D chalcogenide materials are a subject of growing interest in materials science due to their superior chemical tunability which endows tailored properties to the devices prepared thereof. In the family of AIIBIII2XVI4, ordered ZnIn2S4-like based photocatalytic systems have been studied meticulously. In contrast, reports on disordered phases appear to a minor extent. Herein, a photoelectrochemical (PEC) detector based on the pseudo-binary MnIn2Se4 system is presented. A combination of optical measurements and DFT calculations confirmed that the nature of the bandgap in MnIn2Se4 is indirect. Its performance outclasses that of parent compounds, reaching responsivity values of 8.41 mA W-1. The role of the non-centrosymmetric crystal structure is briefly discussed as a possible cause of improved charge separation of the photogenerated charge carriers.
Laboratory for Materials Simulations Paul Scherrer Institut 5232 Villigen Switzerland
Theory and Simulation of Materials Lausanne CH 1015 Lausanne Switzerland
Citace poskytuje Crossref.org
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- $a Serra, Marco $u Department of Inorganic Chemistry, University of Chemistry and Technology Prague Technická 5 166 28 Prague 6 Czech Republic marco.serra@unimore.it zdenek.sofer@vscht.cz
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- $a A photodetector based on the non-centrosymmetric 2D pseudo-binary chalcogenide MnIn2Se4 / $c M. Serra, N. Antonatos, L. Lajaunie, J. Albero, H. Garcia, M. Weng, L. Bastonero, KJ. Sarkar, R. Gusmão, J. Luxa, R. Bartoszewicz, J. Ziembicki, I. Plutnarová, N. Marzari, R. Kudrawiec, Z. Sofer
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- $a Due to their attractive band gap properties and van der Waals structure, 2D binary chalcogenide materials have been widely investigated in the last decade, finding applications in several fields such as catalysis, spintronics, and optoelectronics. Ternary 2D chalcogenide materials are a subject of growing interest in materials science due to their superior chemical tunability which endows tailored properties to the devices prepared thereof. In the family of AIIBIII2XVI4, ordered ZnIn2S4-like based photocatalytic systems have been studied meticulously. In contrast, reports on disordered phases appear to a minor extent. Herein, a photoelectrochemical (PEC) detector based on the pseudo-binary MnIn2Se4 system is presented. A combination of optical measurements and DFT calculations confirmed that the nature of the bandgap in MnIn2Se4 is indirect. Its performance outclasses that of parent compounds, reaching responsivity values of 8.41 mA W-1. The role of the non-centrosymmetric crystal structure is briefly discussed as a possible cause of improved charge separation of the photogenerated charge carriers.
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