Amorphous thin films from Ge-As-Te system were prepared by pulsed laser deposition to study their intrinsic photostability, morphology, chemical composition, structure and optical properties. Photostability of fabricated layers was studied by spectroscopic ellipsometry within as-deposited as well as relaxed (annealed) layers. For irradiation, laser sources operating at three wavelengths in band gap region of the studied materials were employed. The results show that lowest values of photorefraction accompanied with lowest changes of band gap values were exhibited by Ge20As20Te60 thin films, which are therefore considered as the layers with highest photostability in relaxed state. The structure of the films is discussed based on Raman scattering spectroscopy data.

] Department of Graphic Arts and Photophysics Faculty of Chemical Technology University of Pardubice 53210 Pardubice Czech Republic [2] Institut des sciences chimiques de Rennes UMR CNRS 6226 Equipe Verres et Céramiques Université de Rennes 1 35042 Rennes France

Department of Graphic Arts and Photophysics Faculty of Chemical Technology University of Pardubice 53210 Pardubice Czech Republic

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Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin Films

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films