Chemical doping is one of the most suitable ways of tuning the electronic properties of graphene and a promising candidate for a band gap opening. In this work we report a reliable and tunable method for preparation of high-quality boron and nitrogen co-doped graphene on silicon carbide substrate. We combine experimental (dAFM, STM, XPS, NEXAFS) and theoretical (total energy DFT and simulated STM) studies to analyze the structural, chemical, and electronic properties of the single-atom substitutional dopants in graphene. We show that chemical identification of boron and nitrogen substitutional defects can be achieved in the STM channel due to the quantum interference effect, arising due to the specific electronic structure of nitrogen dopant sites. Chemical reactivity of single boron and nitrogen dopants is analyzed using force-distance spectroscopy by means of dAFM.

Faculty of Mathematics and Physics Charles University 5 Holešovičkách 2 Praha 8 Czech Republic

Institute of Physics Academy of Sciences of the Czech Republic Cukrovarnická 10 CZ 16200 Prague Czech Republic

Institute of Physics Academy of Sciences of the Czech Republic Na Slovance 2 10 CZ 18228 Prague Czech Republic

Jülich Aachen Research Alliance ; Fundamentals of Future Information Technology 52425 Jülich Germany

Max Planck Institute for Solid State Research Heisenberg Strasse 1 70569 Stuttgart Germany

Peter Grünberg Institut Forschungszentrum Jülich 52425 Jülich Germany

Citace poskytuje Crossref.org

Local electronic structure of doping defects on Tl/Si(111)1x1

Non-covalent control of spin-state in metal-organic complex by positioning on N-doped graphene