We investigate the structural and electronic properties of nitrogen-doped epitaxial monolayer graphene and quasifreestanding monolayer graphene on 6H-SiC(0001) by the normal incidence x-ray standing wave technique and by angle-resolved photoelectron spectroscopy supported by density functional theory simulations. With the location of various nitrogen species uniquely identified, we observe that for the same doping procedure, the graphene support, consisting of substrate and interface, strongly influences the structural as well as the electronic properties of the resulting doped graphene layer. Compared to epitaxial graphene, quasifreestanding graphene is found to contain fewer nitrogen dopants. However, this lack of dopants is compensated by the proximity of nitrogen atoms at the interface that yield a similar number of charge carriers in graphene.

Diamond Light Source Ltd Didcot OX110DE Oxfordshire United Kingdom

Institute of Physics of the Czech Academy of Sciences Cukrovarnická 10 16200 Prague Czech Republic

Jülich Aachen Research Alliance Fundamentals of Future Information Technology 52425 Jülich Germany

Max Planck Institute for Solid State Research Heisenbergstraße 70569 Stuttgart Germany

Peter Grünberg Institut Forschungszentrum Jülich 52425 Jülich Germany

Citace poskytuje Crossref.org

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