Intuitive Understanding of σ Delocalization in Loose and σ Localization in Tight Helical Conformations of an Oligosilane Chain
Status PubMed-not-MEDLINE Jazyk angličtina Země Německo Médium print-electronic
Typ dokumentu časopisecké články
PubMed
28346750
DOI
10.1002/asia.201700226
Knihovny.cz E-zdroje
- Klíčová slova
- electron delocalization, electron localization, electronic states, oligosilanes, sigma conjugation,
- Publikační typ
- časopisecké články MeSH
Conformational effects on the σ-electron delocalization in oligosilanes are addressed by Hartree-Fock and time-dependent density functional theory calculations (B3LYP, 6-311G**) at MP2 optimized geometries of permethylated uniformly helical linear oligosilanes (all-ω-Sin R2n+2 ) up to n=16 and for backbone dihedral angles ω=55-180°. The extent of σ delocalization is judged by the partition ratio of the highest occupied molecular orbital and is reflected in the dependence of its shape and energy and of UV absorption spectra on n. The results agree with known spectra of all-transoid loose-helix conformers (all-[±165]-Sin Me2n+2 ) and reveal a transition at ω≈90° from the "σ-delocalized" limit at ω=180° toward and close to the physically non-realizable "σ-localized" tight-helix limit ω=0 with entirely different properties. The distinction is also obtained in the Hückel Ladder H and C models of σ delocalization. An easy intuitive way to understand the origin of the two contrasting limits is to first view the linear chain as two subchains with alternating primary and vicinal interactions (σ hyperconjugation), one consisting of the odd and the other of the even σ(SiSi) bonds, and then allow the two subchains to interact by geminal interactions (σ conjugation).
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