The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. Over the past several years, there has been a considerable amount of research on pathways to control the direction of magnetization with an electric field. More recently, an alternative pathway involving the change of the magnetic state (ferromagnet to antiferromagnet) has been proposed. In this paper, we demonstrate electric field control of the Anomalous Hall Transport in a metamagnetic FeRh thin film, accompanying an antiferromagnet (AFM) to ferromagnet (FM) phase transition. This approach provides us with a pathway to "hide" or "reveal" a given ferromagnetic region at zero magnetic field. By converting the AFM phase into the FM phase, the stray field, and hence sensitivity to external fields, is decreased or eliminated. Using detailed structural analyses of FeRh films of varying crystalline quality and chemical order, we relate the direct nanoscale origins of this memory effect to site disorder as well as variations of the net magnetic anisotropy of FM nuclei. Our work opens pathways toward a new generation of antiferromagnetic - ferromagnetic interactions for spintronics.

ALBA Synchrotron Light Facility Carrer de la Llum 2 26 Cerdanyola del Vallès Barcelona 08290 Spain

Catalan Institute of Nanoscience and Nanotechnology CSIC and The Barcelona Institute of Science and Technology Campus UAB Bellaterra 08193 Barcelona Spain

Departament de Física Universitat Autònoma de Barcelona E 08193 Bellaterra Spain

Department of Electrical Engineering and Computer Science University of California Berkeley California 94720 USA

Department of Materials Science and Engineering Cornell University Ithaca New York 14850 USA

Department of Materials Science and Engineering University of California Berkeley California 94720 USA

Department of Materials Science and Engineering University of Michigan Ann Arbor Michigan 48109 USA

Department of Physics California State University Northridge California 91330 8268 USA

Department of Physics University of California Berkeley California 94720 USA

Institució Catalana de Recerca i Estudis Avançats Passeig Lluís Companys 23 E 08010 Barcelona Spain

Institut de Ciència de Materials de Barcelona Campus UAB Bellaterra 08193 Barcelona Spain

Institute of Physics ASCR v v i Cukrovarnicka 10 162 53 Praha 6 Czech Republic

Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley California 94720 USA

Max Planck Institute of Microstructure Physics Weinberg 2 D 06120 Halle Germany

Oak Ridge National Laboratory Center for Nanophase Materials Sciences Oak Ridge Tennessee 37831 USA

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