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Room-temperature antiferromagnetic memory resistor

Marti, X
Autor Marti, X ] Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA [2] Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, 12116 Praha 2, Czech Republic [3] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
Fina, I
Autor Fina, I ] Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra E-08193, Spain [2] Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120, Germany
Frontera, C
Autor Frontera, C Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra E-08193, Spain
Liu, Jian
Autor Liu, Jian Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Wadley, P
Autor Wadley, P ] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
He, Q
Autor He, Q Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Paull, R J
Autor Paull, R J Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA
Clarkson, J D
Autor Clarkson, J D Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA
Kudrnovský, J
Autor Kudrnovský, J Institute of Physics ASCR, v.v.i., Na Slovance 2, 182 21 Praha 8, Czech Republic
Turek, I
Autor Turek, I ] Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, 12116 Praha 2, Czech Republic [2] Institute of Physics of Materials ASCR, v.v.i., Zizkova 22, Brno 616 62, Czech Republic
Kuneš, J
Autor Kuneš, J Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
Yi, D
Autor Yi, D Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Chu, J-H
Autor Chu, J-H Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Nelson, C T
Autor Nelson, C T National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
You, L
Autor You, L Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA
Arenholz, E
Autor Arenholz, E Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Salahuddin, S
Autor Salahuddin, S Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA
Fontcuberta, J
Autor Fontcuberta, J Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra E-08193, Spain
Jungwirth, T
Autor Jungwirth, T ] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
Ramesh, R
Autor Ramesh, R ] Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, California 94720, USA [2] Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Nature materials. 2014 Apr ; 13 (4) : 367-74. [epub] 20140126

Nat Mater
ISSN 1476-4660 | 1476-1122
Zdroj

Status PubMed-not-MEDLINE Jazyk angličtina Země Velká Británie, Anglie Médium print-electronic

Typ dokumentu časopisecké články

Perzistentní odkaz https://www.medvik.cz/link/pmid24464243

PubMed 24464243
DOI 10.1038/nmat3861
PII: nmat3861
Knihovny.cz E-zdroje

Publikační typ
časopisecké články MeSH

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

] Department of Condensed Matter Physics Faculty of Mathematics and Physics Charles University 12116 Praha 2 Czech Republic [2] Institute of Physics of Materials ASCR v v i Zizkova 22 Brno 616 62 Czech Republic

] Department of Materials Science and Engineering and Department of Physics University of California Berkeley California 94720 USA [2] Department of Condensed Matter Physics Faculty of Mathematics and Physics Charles University 12116 Praha 2 Czech Republic [3] Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic

] Department of Materials Science and Engineering and Department of Physics University of California Berkeley California 94720 USA [2] Materials Science Division Lawrence Berkeley National Laboratory Berkeley California 94720 USA

] Institut de Ciència de Materials de Barcelona ICMAB CSIC Campus UAB Bellaterra E 08193 Spain [2] Max Planck Institute of Microstructure Physics Weinberg 2 Halle D 06120 Germany

] Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic [2] School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD UK

Advanced Light Source Lawrence Berkeley National Laboratory Berkeley California 94720 USA

Department of Electrical Engineering and Computer Sciences University of California Berkeley Berkeley California 94720 USA

Department of Materials Science and Engineering and Department of Physics University of California Berkeley California 94720 USA

Institut de Ciència de Materials de Barcelona ICMAB CSIC Campus UAB Bellaterra E 08193 Spain

Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic

Institute of Physics ASCR v v i Na Slovance 2 182 21 Praha 8 Czech Republic

Materials Science Division Lawrence Berkeley National Laboratory Berkeley California 94720 USA