The arrangement of B atoms in a doped Si(1 1 1)-[Formula: see text]:B system was studied using a near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab initio total energy calculations. It is found that most of boron atoms are located in sub-surface L[Formula: see text] positions, beneath a Si atom. However, depending on the preparation method a significant portion of B atoms may be located elsewhere. A possible location of these non-L[Formula: see text]-atoms is at the surface, next to those Si atoms which form the [Formula: see text] reconstruction.

New Technologies Research Centre University of West Bohemia Univerzitní 2732 306 14 Pilsen Czech Republic

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