Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction-twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences 100190 Beijing China

Department of Electronics and Nanoengineering Aalto University Tietotie 3 Espoo FI 02150 Finland

Electron Microscopy Laboratory and International Center for Quantum Materials School of Physics Peking University 100871 Beijing China

Faculty of Electrical Engineering Czech Technical University Prague Technicka 2 166 27 Prague 6 Czech Republic

QTF Centre of Excellence Department of Applied Physics Aalto University Espoo Finland

School of Physical Sciences University of Chinese Academy of Sciences 100190 Beijing China

Songshan Lake Materials Laboratory 523808 Dongguan Guangdong China

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Electrochemical Exfoliation of Layered Non-van der Waals Crystals into 2D Nanosheets: MAX Phases and Beyond

The optical response of artificially twisted MoS[Formula: see text] bilayers