High Pressure Torsion of Copper; Effect of Processing Temperature on Structural Features, Microhardness and Electric Conductivity
Status PubMed-not-MEDLINE Jazyk angličtina Země Švýcarsko Médium electronic
Typ dokumentu časopisecké články
Grantová podpora
22-11949S
Czech Science Foundation
PubMed
37049029
PubMed Central
PMC10096372
DOI
10.3390/ma16072738
PII: ma16072738
Knihovny.cz E-zdroje
- Klíčová slova
- copper, electric conductivity, high pressure torsion, microstructure, twinning,
- Publikační typ
- časopisecké články MeSH
By optimizing the fabrication method, copper components featuring (typically contradicting) advantageous electric conductivity and favorable mechanical properties can be acquired. In this study, we subjected conventional electroconductive copper to a single revolution of high pressure torsion (HPT) at room temperature (RT), searched for the conditions which would yield comparable structure characteristics (grain size) when deformed at a cryogenic temperature, and finally compared the mechanical and electric behaviors to assess specific differences and correlate them with the (sub)structural development. 180° revolution of cryo-HPT imparted structure refinement comparable to 360° revolution of room temperature HPT, i.e., the average grain size at the periphery of both the specimens was ~7 µm. The 360° RT HPT specimen exhibited preferential (111)||SD (shear direction) texture fiber in all the examined regions, whereas the 180° cryo-HPT specimen exhibited more or less randomly oriented grains of equiaxed shapes featuring substantial substructure development of a relatively homogeneous character and massive occurrence of (nano)twins. These structural features resulted in the increase in microhardness to the average value of 118.2 HV0.2 and the increase in the electric conductivity to 59.66 MS·m-1 (compared to 105 HV0.2 and 59.14 MS·m-1 acquired for the 360° RT HPT specimen). The deformation under the cryogenic conditions also imparted higher homogeneity of microhardness distribution when compared to RT processing.
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