Silicon-germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the number of laser pulses (single-shot and multi-shot regimes) on the crystallization of the layers. Based on structural Raman spectroscopy analysis, several annealing regimes were revealed depending on laser fluence, including partial or complete crystallization of the components and formation of solid Si-Ge alloys. Conditions for selective crystallization of germanium when Si remains amorphous and there is no intermixing between the Si and Ge layers were found. Femtosecond mid-IR laser annealing appeared to be particularly favorable for such selective crystallization. Similar crystallization regimes were observed for both single-shot and multi-shot conditions, although at lower fluences and with a lower selectivity in the latter case. A theoretical analysis was carried out based on the laser energy absorption mechanisms, thermal stresses, and non-thermal effects.

Coherent LaserSystems GmbH and Co KG Hans Boeckler Str 12 37079 Göttingen Germany

Faculty of Nuclear Sciences and Physical Engineering Czech Technical University Prague Trojanova 13 12001 Prague Czech Republic

HiLASE Centre Institute of Physics Czech Academy of Sciences Za Radnicí 828 25241 Dolní Břežany Czech Republic

Institute of Physics and Technology Yaroslavl Branch Russian Academy of Sciences Yaroslavl 150007 Russia

Physics Department Novosibirsk State University Pirogova Street 2 Novosibirsk 630090 Russia

Rzhanov Institute of Semiconductor Physics Siberian Branch Russian Academy of Sciences Lavrentiev Ave 13 Novosibirsk 630090 Russia

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