Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time-reversal symmetry breaking anomalous Hall effect (AHE) in noncollinear magnets and altermagnets, but hitherto reported bulk materials are not polar. Here, the authors report the observation of a spontaneous AHE in doped AgCrSe2 , a layered polar semiconductor with an antiferromagnetic coupling between Cr spins in adjacent layers. The anomalous Hall resistivity 3 μ Ω c m $\mu \Omega \, \textnormal {cm}$ is comparable to the largest observed in compensated magnetic systems to date, and is rapidly switched off when the angle of an applied magnetic field is rotated to ≈80° from the crystalline c-axis. The ionic gating experiments show that the anomalous Hall conductivity magnitude can be enhanced by modulating the p-type carrier density. They also present theoretical results that suggest the AHE is driven by Berry curvature due to noncollinear antiferromagnetic correlations among Cr spins, which are consistent with the previously suggested magnetic ordering in AgCrSe2 . The results open the possibility to study the interplay of magnetic and ferroelectric-like responses in this fascinating class of materials.

Grupo de Investigación en Física Aplicada Departamento de Física Universidad del Norte Barranquilla 080020 Colombia

Institut für Physik Johannes Gutenberg Universität Mainz 55128 Mainz Germany

Institute of Physics Czech Academy of Sciences Cukrovarnická 10 Praha 6 162 00 Czech Republic

Max Planck Institute for Chemical Physics of Solids 01187 Dresden Germany

Max Planck Institute for the Physics of Complex Systems 01187 Dresden Germany

Scottish Universities Physics Alliance School of Physics and Astronomy University of St Andrews St Andrews KY16 9SS United Kingdom

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