PLD prepared bioactive BaTiO3 films on TiNb implants
Language English Country Netherlands Media print-electronic
Document type Journal Article
PubMed
27770900
DOI
10.1016/j.msec.2016.08.072
PII: S0928-4931(16)31021-9
Knihovny.cz E-resources
- Keywords
- BaTiO(3), Ferroelectricity, Implants, PLD, Thin films, TiNb,
- MeSH
- Biocompatible Materials chemistry MeSH
- X-Ray Diffraction MeSH
- Electricity MeSH
- Electrodes MeSH
- Lasers * MeSH
- Microscopy, Electron, Scanning MeSH
- Niobium chemistry MeSH
- Silicon Dioxide chemistry MeSH
- Prostheses and Implants * MeSH
- Spectrum Analysis, Raman MeSH
- Alloys chemistry MeSH
- Barium Compounds chemistry MeSH
- Titanium chemistry MeSH
- Publication type
- Journal Article MeSH
- Names of Substances
- barium titanate(IV) MeSH Browser
- Biocompatible Materials MeSH
- Niobium MeSH
- Silicon Dioxide MeSH
- Alloys MeSH
- Barium Compounds MeSH
- Titanium MeSH
BaTiO3 (BTO) layers were deposited by pulsed laser deposition (PLD) on TiNb, Pt/TiNb, Si (100), and fused silica substrates using various deposition conditions. Polycrystalline BTO with sizes of crystallites in the range from 90nm to 160nm was obtained at elevated substrate temperatures of (600°C-700°C). With increasing deposition temperature above 700°C the formation of unwanted rutile phase prevented the growth of perovskite ferroelectric BTO. Concurrently, with decreasing substrate temperature below 500°C, amorphous films were formed. Post-deposition annealing of the amorphous deposits allowed obtaining perovskite BTO. Using a very thin Pt interlayer between the BTO films and TiNb substrate enabled high-temperature growth of preferentially oriented BTO. Raman spectroscopy and electrical characterization indicated polar ferroelectric behaviour of the BTO films.
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