PLD prepared bioactive BaTiO3 films on TiNb implants
Jazyk angličtina Země Nizozemsko Médium print-electronic
Typ dokumentu časopisecké články
PubMed
27770900
DOI
10.1016/j.msec.2016.08.072
PII: S0928-4931(16)31021-9
Knihovny.cz E-zdroje
- Klíčová slova
- BaTiO(3), Ferroelectricity, Implants, PLD, Thin films, TiNb,
- MeSH
- biokompatibilní materiály chemie MeSH
- difrakce rentgenového záření MeSH
- elektřina MeSH
- elektrody MeSH
- lasery * MeSH
- mikroskopie elektronová rastrovací MeSH
- niob chemie MeSH
- oxid křemičitý chemie MeSH
- protézy a implantáty * MeSH
- Ramanova spektroskopie MeSH
- slitiny chemie MeSH
- sloučeniny barya chemie MeSH
- titan chemie MeSH
- Publikační typ
- časopisecké články MeSH
- Názvy látek
- barium titanate(IV) MeSH Prohlížeč
- biokompatibilní materiály MeSH
- niob MeSH
- oxid křemičitý MeSH
- slitiny MeSH
- sloučeniny barya MeSH
- titan MeSH
BaTiO3 (BTO) layers were deposited by pulsed laser deposition (PLD) on TiNb, Pt/TiNb, Si (100), and fused silica substrates using various deposition conditions. Polycrystalline BTO with sizes of crystallites in the range from 90nm to 160nm was obtained at elevated substrate temperatures of (600°C-700°C). With increasing deposition temperature above 700°C the formation of unwanted rutile phase prevented the growth of perovskite ferroelectric BTO. Concurrently, with decreasing substrate temperature below 500°C, amorphous films were formed. Post-deposition annealing of the amorphous deposits allowed obtaining perovskite BTO. Using a very thin Pt interlayer between the BTO films and TiNb substrate enabled high-temperature growth of preferentially oriented BTO. Raman spectroscopy and electrical characterization indicated polar ferroelectric behaviour of the BTO films.
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