A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9×105ℏ2eΩ-1m-1) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin-orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices.

Departamento de Física Aplicada University of Salamanca Pza de la Merced s n 37008 Salamanca Spain

Department of Materials Science Uppsala University Box 35 SE 751 03 Uppsala Sweden

Department of Physics and Astronomy Materials Theory Uppsala University Box 516 SE 751 20 Uppsala Sweden

Department of Thin Films and Nanostructures Institute of Physics of the Czech Academy of Sciences Cukrovarnická 10 112 162 00 Prague Czech Republic

Thin Film Laboratory Department of Physics Indian Institute of Technology Delhi New Delhi 110016 India

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