The discovery of two-dimensional van der Waals magnets has greatly expanded our ability to create and control nanoscale quantum phases. A unique capability emerges when a two-dimensional magnet is also a semiconductor that features tightly bound excitons with large oscillator strengths that fundamentally determine the optical response and are tunable with magnetic fields. Here we report a previously unidentified type of optical excitation-a magnetic surface exciton-enabled by the antiferromagnetic spin correlations that confine excitons to the surface of CrSBr. Magnetic surface excitons exhibit stronger Coulomb attraction, leading to a higher binding energy than excitons confined in bulk layers, and profoundly alter the optical response of few-layer crystals. Distinct magnetic confinement of surface and bulk excitons is established by layer- and temperature-dependent exciton reflection spectroscopy and corroborated by ab initio many-body perturbation theory calculations. By quenching interlayer excitonic interactions, the antiferromagnetic order of CrSBr strictly confines the bound electron-hole pairs within the same layer, regardless of the total number of layers. Our work unveils unique confined excitons in a layered antiferromagnet, highlighting magnetic interactions as a vital approach for nanoscale quantum confinement, from few layers to the bulk limit.

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Transition metal thiophosphates (MPS3) are of great interest due to their layered structure and magnetic properties. Although HgPS3 may not exhibit magnetic properties, its uniqueness lies in its triclinic crystal structure and in the substantial mass of mercury, rendering it a compelling subject for exploration in terms of fundamental properties. In this work, we present comprehensive experimental and theoretical studies of the electronic band structure and optical properties for the HgPS3 crystal and mechanically exfoliated layers from a solid crystal. Based on absorption, reflectance and photoluminescence measurements supported by theoretical calculations, it is shown that the HgPS3 crystal has an indirect gap of 2.68 eV at room temperature. The direct gap is identified at the Γ point of the Brillouin zone (BZ) ≈ 50 meV above the indirect gap. The optical transition at the Γ point is forbidden due to selection rules, but the oscillator strength near the Γ point increases rapidly and therefore the direct optical transitions are visible in the reflectance spectra approximately at 60-120 meV above the absorption edge, across the temperature range of 40 to 300 K. The indirect nature of the bandgap and the selection rules for Γ point contribute to the absence of near-bandgap emission in HgPS3. Consequently, the photoluminescence spectrum is primarily governed by defect-related emission. The electronic band structure of HgPS3 undergoes significant changes when the crystal thickness is reduced to tri- and bilayers, resulting in a direct bandgap. Interestingly, in the monolayer regime, the fundamental transition is again indirect. The layered structure of the HgPS3 crystal was confirmed by scanning electron microscopy (SEM) and by mechanical exfoliation.

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