Despite the renewed interest in rare earth-doped chalcogenide glasses lying mainly in mid-infrared applications, a few comprehensive studies so far have presented the photoluminescence of amorphous chalcogenide films from visible to mid-infrared. This work reports the fabrication of luminescent quaternary sulfide thin films using radio-frequency sputtering and pulsed laser deposition, and the characterization of their chemical composition, morphology, structure, refractive index and Er3+ photoluminescence. The study of Er3+ 4I13/2 level lifetimes enables developing suitable deposition parameters; the dependency of composition, structural and spectroscopic properties on deposition parameters provides a way to tailor the RE-doped thin film properties. The surface roughness is very low for both deposition methods, ensuring reasonable propagation optical losses. The effects of annealing on the sulfide films spectroscopy and lifetimes were assessed. PLD appears consistent composition-wise, and largely independent of the deposition conditions, but radiofrequency magnetron sputtering seems to be more versatile, as one may tailor the film properties through deposition parameters manipulation. The luminescence via rare earth-doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunications or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.

Centre d'Optique Photonique et Laser 2375 rue de la Terrasse Université Laval Québec Qc Canada

CIMAP UMR CNRS 6252 Université de Caen Normandie 14050 Caen France

Department of Graphic Arts and Photophysics Faculty of Chemical Technology University of Pardubice 53210 Pardubice Czech Republic

Univ Rennes CNRS ISCR UMR 6226 F 35000 Rennes France

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