Gamma radiation effects on diamond field-effect biosensors with fibroblasts and extracellular matrix
Language English Country Netherlands Media print-electronic
Document type Journal Article
PubMed
33932892
DOI
10.1016/j.colsurfb.2021.111689
PII: S0927-7765(21)00133-8
Knihovny.cz E-resources
- Keywords
- Atomic force microscopy, Biosensors, Cells, Diamond thin films, Field-effect transistors, Gamma irradiation, Proteins,
- MeSH
- Biosensing Techniques * MeSH
- Diamond * MeSH
- Extracellular Matrix MeSH
- Fibroblasts MeSH
- Microscopy, Electron, Scanning MeSH
- Publication type
- Journal Article MeSH
- Names of Substances
- Diamond * MeSH
Due to high biocompatibility, miniaturization, optical transparency and low production cost together with high radiation hardness the diamond-based sensors are considered promising for radiation medicine and biomedicine in general. Here we present detection of fibroblast cell culture properties by nanocrystalline diamond solution-gated field-effect transistors (SG-FET), including effects of gamma irradiation. We show that blank nanocrystalline diamond field-effect biosensors are stable at least up to 300 Gy of γ irradiation. On the other hand, gate current of the diamond SG-FET biosensors with fibroblastic cells increases exponentially over an order of magnitude with increasing radiation dose. Extracellular matrix (ECM) formation is also detected and analyzed by correlation of electronic sensor data with optical, atomic force, fluorescence, and scanning electron microscopies.
Faculty of Electrical Engineering Czech Technical University Technická 2 16627 Prague Czech Republic
Institute of Physics CAS Cukrovarnická 10 16200 Prague 6 Czech Republic
Nuclear Physics Institute CAS Řež 130 25068 Řež Czech Republic
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