Pulsed UV laser deposition was exploited for the preparation of thin Sn50-x As x Se50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50-x As x Se50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn m Se n + clusters with low m and n values were observed.

Department of Chemistry Faculty of Science Masaryk University Kamenice 5 A14 62500 Brno Czech Republic

Department of Graphic Arts and Photophysics Faculty of Chemical Technology University of Pardubice Studentská 573 53210 Pardubice Czech Republic

Institute of Applied Physics and Mathematics Faculty of Chemical Technology University of Pardubice Studentská 573 53210 Pardubice Czech Republic

Univ Rennes CNRS ISCR UMR6226 ScanMAT UMS 2001 F 35000 Rennes France

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