UNLABELLED: Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film of an antiferromagnetic metal CuMnAs to bursts of heat pulses generated by the absorption of femtosecond laser pulses at room ambient temperature. When a threshold temperature in the heat-based short-term memory of the device is exceeded, the output of the in-memory logic operations is transferred within the same device to a long-term memory, where it can be retrieved at macroscopic times. The long-term memory is based on magnetoresistive switching from a reference low-resistive uniform magnetic state to high-resistive metastable nanofragmented magnetic states. The in-memory heat-based logic operations and the conversion of the outputs into the electrically-readable long-term magnetoresistive memory were performed at sub-nanosecond time scales, making them compatible with the GHz frequencies of standard electronics. Finally, we demonstrate the possibility of rapidly resetting the long-term memory to the reference low-resistive state by heat pulses. SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1186/s43074-025-00207-1.

Faculty of Mathematics and Physics Charles University Ke Karlovu 3 Prague 2 121 16 Czech Republic

Institute of Physics ASCR v v i Cukrovarnická 10 Prague 6 162 53 Czech Republic

School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD UK

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