Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.

Department of Materials ETH Zürich Hönggerbergring 64 Zürich CH 8093 Switzerland

IGS Research Calle La Coma Nave 8 La Pobla de Mafumet Tarragona 43140 Spain

Institute of Physics Academy of Sciences of the Czech Republic Cukrovarnická 10 162 00 Praha 6 Czech Republic

School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD UK

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