Controlling electrostatic charging of nanocrystalline diamond at nanoscale
Jazyk angličtina Země Spojené státy americké Médium print-electronic
Typ dokumentu časopisecké články
PubMed
23679138
DOI
10.1021/la4008312
Knihovny.cz E-zdroje
- MeSH
- diamant chemie MeSH
- mikroskopie atomárních sil MeSH
- nanočástice chemie MeSH
- nanotechnologie * MeSH
- statická elektřina MeSH
- Publikační typ
- časopisecké články MeSH
- Názvy látek
- diamant MeSH
Constant electrical current in the range of -1 to -200 pA is applied by an atomic force microscope (AFM) in contact mode regime to induce and study local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films. The NCD films are deposited on silicon in 70 nm thickness and with 60% relative sp(2) phase content. Charging current is monitored by conductive AFM. Electric potential contrast induced by the current is evaluated by Kelvin force microscopy (KFM). KFM shows well-defined, homogeneous, and reproducible microscopic patterns that are not influenced by inherent tip-surface junction fluctuations during the charging process. The charged patterns are persistent for at least 72 h due to charge trapping inside the NCD film. The current-induced charging also clearly reveals field-induced detrapping at current amplitudes >-50 pA and tip instability at >-150 pA, both of which limit the achievable potential contrast. In addition, we show that the field also determines the range of electronic states that can trap the charge. We present a model and discuss implications for control of the nanoscale charging process.
Citace poskytuje Crossref.org
Silicon-Vacancy Centers in Ultra-Thin Nanocrystalline Diamond Films