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An antidamping spin-orbit torque originating from the Berry curvature

Kurebayashi, H
Author Kurebayashi, H ] Microelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK [2] PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan [3]
Sinova, Jairo
Author Sinova, Jairo ] Institut für Physik, Johannes Gutenberg-Universität Mainz, 55128 Mainz, Germany [2] Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA [3] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
Fang, D
Author Fang, D Microelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
Irvine, A C
Author Irvine, A C Microelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
Skinner, T D
Author Skinner, T D Microelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
Wunderlich, J
Author Wunderlich, J ] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] Hitachi Cambridge Laboratory, Cambridge CB3 0HE, UK
Novák, V
Author Novák, V Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
Campion, R P
Author Campion, R P School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
Gallagher, B L
Author Gallagher, B L School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
Vehstedt, E K
Author Vehstedt, E K ] Department of Physics, Texas A&M University, College Station, Texas 77843-4242, USA [2] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
Zârbo, L P
Author Zârbo, L P Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
Výborný, K
Author Výborný, K Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic
Ferguson, A J
Author Ferguson, A J Microelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
Jungwirth, T
Author Jungwirth, T ] Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK

Nature nanotechnology. 2014 Mar ; 9 (3) : 211-7. [epub] 20140302

Nat Nanotechnol
ISSN 1748-3395 | 1748-3387
Source

Status PubMed-not-MEDLINE Language English Country Great Britain, England Media print-electronic

Document type Journal Article, Research Support, Non-U.S. Gov't, Research Support, U.S. Gov't, Non-P.H.S.

Persistent link https://www.medvik.cz/link/pmid24584275

PubMed 24584275
DOI 10.1038/nnano.2014.15
PII: nnano.2014.15
Knihovny.cz E-resources

Publication type
Journal Article MeSH
Research Support, Non-U.S. Gov't MeSH
Research Support, U.S. Gov't, Non-P.H.S. MeSH

Magnetization switching at the interface between ferromagnetic and paramagnetic metals, controlled by current-induced torques, could be exploited in magnetic memory technologies. Compelling questions arise regarding the role played in the switching by the spin Hall effect in the paramagnet and by the spin-orbit torque originating from the broken inversion symmetry at the interface. Of particular importance are the antidamping components of these current-induced torques acting against the equilibrium-restoring Gilbert damping of the magnetization dynamics. Here, we report the observation of an antidamping spin-orbit torque that stems from the Berry curvature, in analogy to the origin of the intrinsic spin Hall effect. We chose the ferromagnetic semiconductor (Ga,Mn)As as a material system because its crystal inversion asymmetry allows us to measure bare ferromagnetic films, rather than ferromagnetic-paramagnetic heterostructures, eliminating by design any spin Hall effect contribution. We provide an intuitive picture of the Berry curvature origin of this antidamping spin-orbit torque as well as its microscopic modelling. We expect the Berry curvature spin-orbit torque to be of comparable strength to the spin-Hall-effect-driven antidamping torque in ferromagnets interfaced with paramagnets with strong intrinsic spin Hall effect.

] Department of Physics Texas A and M University College Station Texas 77843 4242 USA [2] Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic

] Institut für Physik Johannes Gutenberg Universität Mainz 55128 Mainz Germany [2] Department of Physics Texas A and M University College Station Texas 77843 4242 USA [3] Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic

] Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic [2] Hitachi Cambridge Laboratory Cambridge CB3 0HE UK

] Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic [2] School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD UK

] Microelectronics Group Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK [2] PRESTO Japan Science and Technology Agency Kawaguchi 332 0012 Japan [3]

Institute of Physics ASCR v v i Cukrovarnická 10 162 53 Praha 6 Czech Republic

Microelectronics Group Cavendish Laboratory University of Cambridge JJ Thomson Avenue Cambridge CB3 0HE UK

School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD UK

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