In order to improve soybean's resistance to lodging, silicon (Si) solutions at concentrations of 0,100, 200,300 mg kg-1 were applied during the seedling stage. The Si accumulation in different parts of the plants, the photosynthetic parameters of leaves and chlorophyll content, the stem bending resistance, the expression of genes of lignin biosynthesis and associated enzyme activity and sap flow rates were measured at early and late growth stages. The potential mechanisms for how Si improve growth and shade tolerance, enhances lodging resistance and improves photosynthesis were analyzed to provide a theoretical basis for the use of Si amendments in agriculture. After application of Si at 200 mg kg-1, the net photosynthetic rate of soybeans increased by 46.4 % in the light and 33.3 % under shade. The application of Si increased chlorophyll content, and fresh weight of leaves, reduced leaf area and enhanced photosynthesis by increasing stomatal conductance. The activity of peroxidase (POD), 4-coumarate:CoA ligase (4CL), cinnamyl alcohol dehydrogenase (CAD) and phenylalanine ammonia-lyase (PAL) increased during pre-and post-growth periods, whereas Si also increased lignin accumulation and inhibited lodging. We concluded that Si affects the composition of plant cell walls components, mostly by altering linkages of non-cellulosic polymers and lignin. The modifications of the cell wall network through Si application could be a useful strategy to reduce shading stress in intercropping.
