Single-atom (SA) cocatalysts (SACs) have garnered significant attention in photocatalysis due to their unique electronic properties and high atom utilization efficiency. This review provides an overview of the concept and principles of SA cocatalyst in photocatalysis, emphasizing the intrinsic differences to SAs used in classic chemical catalysis. Key factors that influence the efficiency of SAs in photocatalytic reactions, particularly in photocatalytic hydrogen (H2) production, are highlighted. This review further covers synthesis methods, stabilization strategies, and characterization techniques for common SAs used in photocatalysis. Notably, "reactive deposition" method, which often shows a self-homing effect and thus achieves a maximum utilization efficiency of SA cocatalysts, is emphasized. Furthermore, the applications of SA cocatalysts in various photocatalytic processes, including H2 evolution, carbon dioxide reduction, nitrogen fixation, and organic synthesis, are comprehensively reviewed, along with insights into common artifacts in these applications. This review concludes by addressing the challenges faced by SACs in photocatalysis and offering perspectives on future developments, with the aim of informing and advancing research on SAs for photocatalytic energy conversion.

• Keywords
• cocatalyst, hydrogen production, photocatalysis, single atom,
• Publication type
• Journal Article MeSH
• Review MeSH

Development of a robust photocathode using low-cost and high-performing materials, e.g., p-Si, to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). Specifically, a very thin (3.9 nm ∼10 unit cells) STO layer epitaxially overgrown on rGO-buffered Si showed the highest onset potential (0.326 V vs RHE) in comparison to the counterparts with thicker and/or nonepitaxial STO. The photovoltage, flat-band potential, and electrochemical impedance spectroscopy measurements revealed that the epitaxial photocathode was more beneficial for charge separation, charge transfer, and targeted redox reaction than the nonepitaxial one. The STO/rGO/Si with a smooth and highly epitaxial STO layer outperforming the directly contacted STO/Si with a textured and polycrystalline STO layer showed the importance of having a well-defined passivation layer. In addition, the numerous pinholes formed in the directly contacted STO/Si led to the rapid degradation of the photocathode during the PEC measurements. The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.

• Keywords
• SrTiO3, epitaxy, onset potential, photoelectrochemical water splitting, protection layer, pulsed laser deposition, reduced graphene oxide, stability,
• Publication type
• Journal Article MeSH