Most cited article - PubMed ID 32358571
Precise control of the interlayer twist angle in large scale MoS2 homostructures
2D materials have rapidly gained attention due to their exceptional properties like high surface area, flexibility, and tunable electronic characteristics. These attributes make them highly versatile for applications in energy storage, electronics, and biomedicine. Inspired by graphene's success, researchers are exploring other 2D materials from bulk crystals. Electrochemical exfoliation (ECE) is an efficient method for producing these materials, offering more sustainable mild conditions, quick processing, simple equipment, and high yields. While substantial progress has been made in the ECE of layered van der Waals (L-vdW) crystals, the exploration of layered non-van der Waals (L-NvdW) materials remains in its early stages. This review delves into using ECE to create 2D nanoplatelets from L-NvdW crystals. A comparative analysis of exfoliation techniques is provided for L-vdW and L-NvdW materials, followed by a comprehensive overview of recent advances in ECE methods applied to L-NvdW crystals. The discussion is organized around key categories, including the selective extraction of "M" and "A" layers respectively from MAX phases, decalcification of Zintl phases, and oxide delocalization from metal oxides. It is concluded by highlighting the potential applications of these 2D materials and discussing the challenges and future directions in this evolving field.
- Keywords
- 2D materials, delocalization, electrochemical exfoliation, layered non‐van der Waals,
- Publication type
- Journal Article MeSH
- Review MeSH
Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom-the interlayer twist. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS[Formula: see text] encapsulated in hexagonal BN with interlayer twist angle ranging from 0[Formula: see text] to 60[Formula: see text] using Raman scattering and photoluminescence spectroscopies. It is found that the strength of the interlayer coupling in the studied BLs can be estimated using the energy dependence of indirect emission versus the A[Formula: see text]-E[Formula: see text] energy separation. Due to the hybridization of electronic states in the valence band, the emission line related to the interlayer exciton is apparent in both the natural (2H) and artificial (62[Formula: see text]) MoS[Formula: see text] BLs, while it is absent in the structures with other twist angles. The interlayer coupling energy is estimated to be of about 50 meV. The effect of temperature on energies and intensities of the direct and indirect emission lines in MoS[Formula: see text] BLs is also quantified.
- Publication type
- Journal Article MeSH