Ge4+ doped TiO2 for stoichiometric degradation of warfare agents
Language English Country Netherlands Media print-electronic
Document type Journal Article, Research Support, Non-U.S. Gov't
PubMed
22640824
DOI
10.1016/j.jhazmat.2012.05.007
PII: S0304-3894(12)00489-X
Knihovny.cz E-resources
- MeSH
- Chemical Warfare Agents chemistry MeSH
- Decontamination methods MeSH
- Germanium chemistry MeSH
- Metal Nanoparticles chemistry MeSH
- Organothiophosphorus Compounds chemistry MeSH
- Soman chemistry MeSH
- Titanium chemistry MeSH
- Mustard Gas chemistry MeSH
- Publication type
- Journal Article MeSH
- Research Support, Non-U.S. Gov't MeSH
- Names of Substances
- Chemical Warfare Agents MeSH
- Germanium MeSH
- Organothiophosphorus Compounds MeSH
- Soman MeSH
- Titanium MeSH
- titanium dioxide MeSH Browser
- VX MeSH Browser
- Mustard Gas MeSH
Germanium doped TiO(2) was prepared by homogeneous hydrolysis of aqueous solutions of GeCl(4) and TiOSO(4) with urea. The synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, EDS analysis, specific surface area (BET) and porosity determination (BJH). Ge(4+) doping increases surface area and content of amorphous phase in prepared samples. These oxides were used in an experimental evaluation of their reactivity with chemical warfare agent, sulphur mustard, soman and agent VX. Ge(4+) doping worsens sulphur mustard degradation and improves soman and agent VX degradation. The best degree of removal (degradation), 100% of soman, 99% of agent VX and 95% of sulphur mustard, is achieved with sample with 2 wt.% of germanium.
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