Electrically induced and detected Néel vector reversal in a collinear antiferromagnet
Status PubMed-not-MEDLINE Language English Country England, Great Britain Media electronic
Document type Journal Article, Research Support, Non-U.S. Gov't
PubMed
30409971
PubMed Central
PMC6224378
DOI
10.1038/s41467-018-07092-2
PII: 10.1038/s41467-018-07092-2
Knihovny.cz E-resources
- Publication type
- Journal Article MeSH
- Research Support, Non-U.S. Gov't MeSH
Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with electrical writing and reading is one of the central topics of antiferromagnetic spintronics. So far, such a combined functionality has been demonstrated via 90° reorientations of the Néel vector generated by the current-induced spin orbit torque and sensed by the linear-response anisotropic magnetoresistance. Here we show that in the same antiferromagnetic CuMnAs films as used in these earlier experiments we can also control 180° Néel vector reversals by switching the polarity of the writing current. Moreover, the two stable states with opposite Néel vector orientations in this collinear antiferromagnet can be electrically distinguished by measuring a second-order magnetoresistance effect. We discuss the general magnetic point group symmetries allowing for this electrical readout effect and its specific microscopic origin in CuMnAs.
Hitachi Cambridge Laboratory Hitachi Europe LTD JJ Thomson Avenue Cambridge CB3 0HE United Kingdom
Institut für Festkörper und Materialphysik Technische Universität Dresden 01062 Dresden Germany
Institute of Physics Czech Academy of Sciences Cukrovarnická 10 160 00 Prague 6 Czech Republic
Max Planck Institute for Chemical Physics of Solids 01187 Dresden Germany
School of Physics and Astronomy University Of Nottingham NG7 2RD Nottingham United Kingdom
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