Electrical switching of an antiferromagnet
Status PubMed-not-MEDLINE Language English Country United States Media print-electronic
Document type Journal Article, Research Support, Non-U.S. Gov't
PubMed
26841431
DOI
10.1126/science.aab1031
PII: science.aab1031
Knihovny.cz E-resources
- Publication type
- Journal Article MeSH
- Research Support, Non-U.S. Gov't MeSH
Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 10(6) ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
Diamond Light Source Chilton Didcot Oxfordshire OX11 0DE UK
Hitachi Cambridge Laboratory J J Thomson Avenue Cambridge CB3 0HE UK
School of Physics and Astronomy University of Nottingham Nottingham NG7 2RD UK
References provided by Crossref.org
Low-Temperature Electron Spin Resonance Study of MnPS3 Antiferromagnetic Single Crystal
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Terahertz electrical writing speed in an antiferromagnetic memory
Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films
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Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility
Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn
Room-temperature tetragonal non-collinear Heusler antiferromagnet Pt2MnGa
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